Mathematical modelling of various physical aspects
of industrial and research crystal growth on the macroscopic and
atomic level.
1. 2D and 3D numerical modelling of turbulent melt
flows in crucibles for large single silicon crystal Czochralski
growth. Investigation of the melt motion under the influence of
various static (DC) and alternating (AC) magnetic fields. Calculation
of the neat and mass transfer.
2. 2D and 3D numerical modelling laminar transient melt flows in
Floating Zone system for large single silicon crystal growth. Axisymmetric
numerical modelling of the shape of the molten zone during Floating
Zone process.Investigation of the melt motion under the influence
of various static (DC) and alternating (AC) magnetic fields. Calculation
of the neat and mass transfer.
3. Numerical and theoretical analysis of the growth stability during
Floating Zone and Czochralski crystal growth.
4. Numerical analysis of thermal stresses in crystal during crystal
growth.
5. Numerical analysis of thermal fields in the system determined
mainly by radiation heat exchange.
6. 2D and 3D electromagnetic service calculations for DC and AC
fields (analysis of magnet systems used in crystal growth). 3D calculations
of the high frequency electromagnetic fields in the systems like
industrial Floating Zone system with pancake inductor.
7. Microscopic (atomic) modelling of the crystallisation process
for cubic and diamond structures. Microscopic analysis of the segregation
process. Modelling of facets dynamic.
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