Reserch Fields

Mathematical modelling of various physical aspects of industrial and research crystal growth on the macroscopic and atomic level.

1. 2D and 3D numerical modelling of turbulent melt flows in crucibles for large single silicon crystal Czochralski growth. Investigation of the melt motion under the influence of various static (DC) and alternating (AC) magnetic fields. Calculation of the neat and mass transfer.
2. 2D and 3D numerical modelling laminar transient melt flows in Floating Zone system for large single silicon crystal growth. Axisymmetric numerical modelling of the shape of the molten zone during Floating Zone process.Investigation of the melt motion under the influence of various static (DC) and alternating (AC) magnetic fields. Calculation of the neat and mass transfer.
3. Numerical and theoretical analysis of the growth stability during Floating Zone and Czochralski crystal growth.
4. Numerical analysis of thermal stresses in crystal during crystal growth.
5. Numerical analysis of thermal fields in the system determined mainly by radiation heat exchange.
6. 2D and 3D electromagnetic service calculations for DC and AC fields (analysis of magnet systems used in crystal growth). 3D calculations of the high frequency electromagnetic fields in the systems like industrial Floating Zone system with pancake inductor.
7. Microscopic (atomic) modelling of the crystallisation process for cubic and diamond structures. Microscopic analysis of the segregation process. Modelling of facets dynamic.

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