| Shortened versions of held presentations | ||
|
Information on the melt growth process through Lateral
Photovoltage Scanning (LPS) measurements |
||
|
Melting dynamics for different materials in induction
cold crucible: numerical simulations comparisons with experiment |
||
|
Segregation control by the use of dynamic magnetic
fields during semiconductor crystal growth |
||
|
Numerical modelling of turbulent flows in industrial
CZ silicon large crystal growth with magnetic fields, 2D and 3D analysis |
||
|
Scientific cooperation between Hanover University,
University of Latvia and Wacker Silitronic AG on the field of mathematical
modeling in crystal growth |
||
|
Numerical modelling of industrial FZ silicon crystal
growth with magnetic fields |
||
|
Analysis of stability of crystallisation front in industrial
single crystal growth |
||
|
What is imaginable by use of magnetic fields at Czochralski
growth of III-Vs in low-temperature gradients? |
||
|
3D simulation and experimental verification of recirculated
turbulent melt flow |
||
|
Simplified kinetic models for some growtg aspects in
industrial single crystal growth |
||
|
Investigation of different combinations of steady and
alternating magnetic fields to control the hydrodinamics and heat/mass
transfer in single crystal growth |
||
|
Simulation of industrial-scale MCZ process |
||
|
Experimental Investigation of a CZ - process of Large
Diameter Silicon Single Crystal Growth Under the Influence of Magnetic
Fields |
||
|
The use of magnetic fields in industrial growth of
single silicon crystals |
||
|
MHD effects in the industrial Czochralski growth of
300 mm Si crystals |